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| features low forward voltage high breakdown voltage guard ring protected absolute maximum ratings ta = 25 parameter symbol rating unit continuous reverse voltage v r 30 v continuous forward current i f 200 ma average forward current (v rwm = 25 v; a = 1.57; ? = 0.5) i f(av) 200 ma repetitive peak forward current (tp 1s;? 0.5) i frm 300 ma non-repetitive peak forward current (t p =10ms) i fsm 5a thermal resistance from junction to ambient r th j-a 320 k/w operating ambient temperature t amb -65 to +125 junction temperature t j 125 storage temperature t stg -65 to +150 electrical characteristics ta = 25 parameter symbol testconditons max unit i f =0.1ma 240 i f =1ma 320 i f =10ma 400 i f =30ma 500 i f =100ma 800 reverse current i r v r =25v * 2.3 a diode capacitance c d f=1mhz;v r =1v 10 pf * pulsed test: t p = 300 s; ? = 0.02. forward voltage v f mv ll-34 unit: mm 3.70 3.30 0.30 0.50 2.64ref 1.30 1.60 sales@twtysemi.com 1 of 2 http://www.twtysemi.com 1BAS85 product specification 4008-318-123
1BAS85 fig.1 derating curve fig.2 forward current as a function of forward voltage; typical values. fig.3 reverse current as a function of reverse voltage; typical values. fig.4 diode capacitance as a function of reverse voltage; typical values. (1) tamb = 125 (2) tamb = 85 (3) tamb = 25 (1) tamb = 125 (2) tamb = 85 (3) tamb = 25 typical characteristics sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification 4008-318-123 |
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